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SiC Trench MOSFETs Slide 11

In summary, ROHM’s 3rd generation SiC MOSFETs utilize a proprietary trench gate structure that reduces ON-resistance by 50% and input capacitance by 35% when compared with existing planar-type SiC MOSFETs. This translates to significantly lower switching loss and faster switching speeds, improving efficiency while reducing power loss in a variety of equipment.

PTM Published on: 2019-09-27