Slide 1 Slide 2 Slide 3 Slide 4 Slide 5 Slide 6 Slide 7 Slide 8 Slide 9 Product List
SiC Trench MOSFETs Slide 5

SiC MOSFETs are normally OFF voltage-controlled devices, making them easy to drive with less gate drive loss incurred. The basic drive method is the same as that for IGBTs and Si MOSFETs. The OFF-ON gate voltage swing is nominally 0 to 18 V. If high noise tolerance and fast switching are required, either 0 V or a negative voltage of approximately -2 V can be used.

PTM Published on: 2019-09-27