In general, if the turn on and turn off times are slow, switching losses increase, which is a bad thing. So, faster turn on and turn off times yield lower switching losses, which is a good thing. Certain applications require external series gate resisters to lessen the gate drive in order to minimize ringing and EMI concerns. Looking at the silicon junction plot on the left, the customer can see that when the V_GS is 3 V, the Q_g is about 30 nC. When the V_GS is 4 V, the Q_g is about 40 nC. When the V_GS is about 5.2 V, the customer will see the Q_g remain flat from about 52 nC to about 135 nC. This flat part of the curve is called the Miller plateau, where all the available gate drive current is consumed in order to fully discharge the gate-to-drain capacitance, facilitating a rapid voltage change across the drain-to-source terminals. The V_GS should swiftly traverse through the Miller plateau during turn on or turn off in order to maintain efficient switching losses. If the gate driver is supplying a valid V_GS of 10 V (fully turning on the MOSFET) but the voltage supply to the gate driver accidently drops too low, the V_GS will also drop, and without the proper undervoltage lockout, the MOSFET could reside in the Miller plateau, causing excessive gate drive current and resulting in very poor efficiency. This silicon junction MOSFET is best driven by a gate driver with an undervoltage lockout well above the Miller plateau region of 4 V to 6 V. The NCP51561BAD or NCP51561BBD gate drivers are a great choice for driving the silicon junction MOSFET on the left because both specify an 8 V undervoltage lockout. Turning the customer's attention to the silicon carbide MOSFET plot on the right, the customer will notice the y-axis V_GS goes from -3 V to 18 V, while the Miller plateau is about 6.5 V. Driving this silicon carbide MOSFET with a gate driver whose undervoltage lockout is 8 V is dangerously close to the Miller plateau. Therefore, a gate driver with a higher undervoltage lockout such as 17 V is a much better solution for preventing the V_GS from entering the Miller plateau. This shows why the NCP51561DAD or NCP51561DBD gate drivers are a great choice for driving the silicon carbide MOSFET on the right.