Paralleling eGaN FETs

Paralleling eGaN® FETs

EPC

This presentation will detail the work EPC has done to make it as easy as possible to use eGaN FETs in power conversion applications where more than one device working in parallel is needed to meet the output power requirements. These challenges will be presented and recommendations made to ensure the best performance from a paralleled switch converter. The discussion will focus on a single gate driver per switch and the half bridge topology.

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图片制造商零件编号描述漏源电压（Vdss）25°C 时电流 - 连续漏极 (Id)可供货数量价格
GANFET N-CH 40V 10A DIE OUTLINEEPC2014GANFET N-CH 40V 10A DIE OUTLINE40 V10A（Ta）0 - 立即发货See Page for Pricing查看详情
GANFET N-CH 200V 3A DIEEPC2012GANFET N-CH 200V 3A DIE200 V3A（Ta）0 - 立即发货See Page for Pricing查看详情
PTM Published on: 2012-04-26

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